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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
Philips Semiconductors
Product specification
Base station LDMOS transistors
FEATURES * Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at 750 kHz: - Output power = 15 W (AV) - Gain = 16 dB - Efficiency = 27% - ACPR = -46 dBc at 750 kHz and BW = 30 kHz * 70 W CW performance * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (800 to 1000 MHz) * Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
BLF0810-90; BLF0810S-90
APPLICATIONS * RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
handbook, halfpage
1
1 3
2 Top view
3
MBK394
2 Top view
MBL105
Fig.1 Simplified outline SOT502A (BLF0810-90).
Fig.2 Simplified outline SOT502B (BLF0810S-90)
QUICK REFERENCE DATA Typical RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION Class-AB (2-tone) CDMA (IS95) f (MHz) f1 = 890.0; f2 = 890.1 890 VDS (V) 27 27 PL (W) 70 (PEP) 15 (AV) Gp (dB) 16 16 D (%) 39 27 d3 (dBc) -28 - ACPR 750 (dBc) - -46
2003 Jun 12
2
Philips Semiconductors
Product specification
Base station LDMOS transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Tstg Tj drain-source voltage gate-source voltage storage temperature junction temperature PARAMETER
BLF0810-90; BLF0810S-90
MIN. - - -65 -
MAX. 75 15 150 200 V V
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-hs Notes 1. Thermal resistance is determined under RF operating conditions. 2. Depending on mounting condition in application. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 300 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 10 A VGS = 9 V; ID = 10 A MIN. 75 4 - 24 - - - TYP. - - - - - 4.4 120 MAX. - 5 1.5 - 0.5 - - UNIT V V A A A S m PARAMETER thermal resistance from junction to case thermal resistance from heatsink to junction CONDITIONS Th = 25 C, PL = 35 W (AV), note 1 Th = 25 C, PL = 35 W (AV), note 2 VALUE 1 1.3 UNIT K/W K/W
2003 Jun 12
3
Philips Semiconductors
Product specification
Base station LDMOS transistors
APPLICATION INFORMATION RF performance in a common source class-AB circuit.
BLF0810-90; BLF0810S-90
VDS = 27 V; IDQ = 560 mA; f = 890 MHz; Th = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. - - -6 - - - -27 UNIT
Mode of operation: 2-tone CW, 100 kHz spacing Gp D IRL d3 Gp D d3 gain power drain efficiency input return loss third order intermodulation distortion gain power drain efficiency third order intermodulation distortion ruggedness VSWR = 10 : 1 through all phases; PL = 125 W (PEP) PL = 15 W (AV) PL = 15 W (AV) at BW = 30 kHz PL = 63 W (PEP) PL = 45 W (PEP) 15 29 - - - 33 - 16.5 32 -10 -40 16.5 38 -32 dB % dB dBc dB % dBc
no degradation in output power
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13) Gp D ACPR 750 gain power drain efficiency adjacent channel power ratio - - - 16 27 -46 - - - dB % dBc
handbook, halfpage
20
MDB170
50
Gp (dB)
Gp
D (%)
40
handbook, halfpage
0
MDB171
d3 (dBc) -20 IDQ = 400 mA 450 mA -40 500 mA 600 mA
16
D
12 30
8
20 -60
4
10
0 0 20 40 60
0 80 100 PL (PEP) (W)
-80
0
20
40
60
80
100
PL (PEP) (W)
VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz. VDS = 27 V; IDQ = 560 mA; f1 = 890.0 MHz; f2 = 890.1 MHz.
Fig.4 Fig.3 Power gain and efficiency as functions of peak envelope power, typical values.
Third order intermodulation distortion as a function of peak envelope power, typical values.
2003 Jun 12
4
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
handbook, halfpage
0
MDB172
handbook, halfpage
0
MDB173
d5 (dBc) -20 IDQ = 600 mA 500 mA
d7 (dBc) -20
-40
-40
IDQ = 600 mA 500 mA
-60
450 mA 400 mA
-60
450 mA 400 mA
-80
-80 0 20 40 60 80 100 0 20 40 60 80 100 PL (PEP) (W) PL (PEP) (W)
VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz.
VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz.
Fig.5
Fifth order intermodulation distortion as a function of peak envelope power; typical values.
Fig.6
Seventh order intermodulation distortion as a function of peak envelope power; typical values.
handbook, halfpage
20
MDB174
40
Gp (dB) 15
Gp
D (%)
handbook, halfpage
0
MDB175
ACPR (dB) -20
30
10
20
-40 750 kHz
5
D
10
-60
1.98 MHz
0 20 30 40 50 PL (AV)(dBm)
0
-80
20
30
40
50 PL (AV)(dBm)
VDS = 27 V; IDQ = 560 mA; f = 890 MHz. measured under CDMA conditions; test signal standard IS-95.
VDS = 27 V; IDQ = 560 mA; f = 890 MHz. measured under CDMA conditions; test signal standard IS-95.
Fig.7
Power gain and drain efficiency as functions of average load power; typical values.
Fig.8
ACPR as a function of average load power; typical values.
2003 Jun 12
5
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
handbook, halfpage
2
MDB176
handbook, halfpage
2
MDB177
ZI () ri 1
ZL () 1
RL
0
xi
0
-1
-1
XL
-2 0.8
0.85
0.9
0.95 f (GHz)
1
-2 0.8
0.85
0.9
0.95 f (GHz)
1
Class-AB operation; VDS = 27 V; IDQ = 560 mA; PL = 18 W. Values comprised for different parameters.
Class-AB operation; VDS = 27 V; IDQ = 560 mA; PL = 18 W. Values comprised for different parameters.
Fig.9
Input impedance as a function of frequency (series components); typical values.
Fig.10 Input impedance as a function of frequency (series components); typical values.
handbook, halfpage
drain ZL gate Z IN
MGS998
Fig.11 Definition of transistor impedance.
2003 Jun 12
6
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
handbook, full pagewidth
C2 Vbias
Q1
C3 C4 C6 L9 R1 C7 L5 L10
C15 L12
C17 C9 Vsupply C10
L3 RF in L1 C1 L2 L4 C5 L6
L7
Q2
L11 L14 C13 C18 C11 C12 L13 C16 L15 L16 RF out
L8 C8
C14
MDB168
Fig.12 Test circuit for 860 to 900 MHz.
2003 Jun 12
7
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
handbook, full pagewidth
BLF0810-90 output Rev C
C2 C4 C15 C17 C9 C3 R1 C1 L5 C7 C5 C13 C8 C11 C12 C18 C10
C6
BLF0810-90 input Rev C
C16 C14
BLF0810-90 output Rev C
60
60
BLF0810-90 input Rev C
40
40
MDB178
Dimensions in mm. The components are situated on one side of the copper-clad Rogers 6006 printed-circuit board (r = 6.15); thickness = 25 mm. The other side is unetched and serves as a ground plane.
Fig.13 Component layout for 860 to 900 MHz test circuit.
2003 Jun 12
8
Philips Semiconductors
Product specification
Base station LDMOS transistors
List of components (see Figs 12 and 13) COMPONENT C1, C6, C13, C14, C15, C16, C17 C2 C3 C4, C9, C10, C11, C12 C5, C18 C7, C8 R1 Q1 Q2 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12, L13 L14 L15, L16 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 tantalum capacitor air trimmer capacitor multilayer ceramic chip capacitor potentiometer 7808 voltage regulator BLF0810-90/BLF0810S-90 LDMOS transistor stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 ferroxcube stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2
BLF0810-90; BLF0810S-90
VALUE 68 pF 330 nF 100 nF 10 F 8 pF 8.2 pF 1 k
DIMENSIONS
5.22 x 0.92 mm 6.47 x 0.92 mm 5.38 x 4.8 mm 2.4 x 0.92 mm 9.73 x 0.92 mm 1.82 x 9.3 mm 8.15 x 17.9 mm 44 x 0.92 mm 18.45 x 28.3 mm 9.95 x 5.38 mm 37.6 x 3.35 mm 2.36 x 0.92 mm 4.22 x 0.92 mm
2. The striplines are on a double copper-clad Rogers 6006 printed-circuit board (r = 6.15); thickness = 0.64 mm.
2003 Jun 12
9
Philips Semiconductors
Product specification
Base station LDMOS transistors
PACKAGE OUTLINES Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLF0810-90; BLF0810S-90
SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
2003 Jun 12
10
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
2003 Jun 12
11
Philips Semiconductors
Product specification
Base station LDMOS transistors
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development
BLF0810-90; BLF0810S-90
DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Jun 12
12
Philips Semiconductors
Product specification
Base station LDMOS transistors
NOTES
BLF0810-90; BLF0810S-90
2003 Jun 12
13
Philips Semiconductors
Product specification
Base station LDMOS transistors
NOTES
BLF0810-90; BLF0810S-90
2003 Jun 12
14
Philips Semiconductors
Product specification
Base station LDMOS transistors
NOTES
BLF0810-90; BLF0810S-90
2003 Jun 12
15
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp16
Date of release: 2003
Jun 12
Document order number:
9397 750 11544

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